CS13N50FA9H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche e.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
.
CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD (TC=25℃) RDS(ON)Typ
500 13 60 0.34
switching performance and enhance the avalanche ener.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 345.89KB)